BSS816NW L6327

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Overview of BSS816NW L6327

Part NumberBSS816NW L6327
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 20V 1.4A SOT323-3
DatasheetsDownload BSS816NW L6327 Datasheet PDFPDF Icon
Price for BSS816NW L6327

Specification of BSS816NW L6327

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V
Rds On (Max) @ Id, Vgs
160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id
750mV @ 3.7A
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 2.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT323
Package / Case
SC-70, SOT-323

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